Enhanced Electron Spin-Polarization in Plzotoehssion from Thin GaAs”
نویسندگان
چکیده
The polarization of photoemitted electrons from thin GaAs layers grown by molecular beam epitaxy(MBE) h as 1 ,een measured. Pola,riza.tion as high as 49% was observed for a 0.2 pm thick GaAs sample at excitation photon wavelengths longer than 750 nm. The maximum polarization is dependent on the thickness of the GaAs layer, decreasing to about 41% for-a 0.9 pm thick GaAs sample. ‘*
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